CONTRIBUTIONS (Posters - 96)

Information for poster presenters:

Poster size: A0 format (width: 841 mm x Height: 1189 mm) (Portrait).
Posters Presentation: We recommend the poster presenters to stand in front of their poster in order to enhance fruitful discussions – at designated time, evaluators will pass by to discuss the work. Posters should be presented during the designated sessions (A & B).
Posters Schedule:
Session A (posters number 1-50) From Tuesday morning (September 19) to Wednesday (September 20) just after afternoon coffee break
You need to make sure you remove your poster at 16h00 LATEST on September 20

Biomedical applications of graphene and other two-dimensional materials
Synthesis of graphene and other two-dimensional materials
Optical properties and spectroscopy of graphene and other two-dimensional materials
Electrical properties of graphene and other two-dimensional materials

Session B (posters number 51-97) From Thursday morning (September 21) to Friday (September 22) just after lunch
You need to make sure you remove your poster at 14h30 LATEST on September 22

Chemistry and electrochemistry of graphene and other two-dimensional materials
Devices constructed from of graphene and other two-dimensional materials
Energy applications of graphene and other two-dimensional materials
Mechanical properties of graphene and other two-dimensional materials
Microscopy of graphene and other two-dimensional materials
Other applications of graphene and other two-dimensional materials
Theory of graphene and other two-dimensional materials
Thermal properties of graphene and other two-dimensional materials

Other info: To each poster will be assigned a number (see below). You will find double side tape in a box at the Registration Desks to hang your poster. Please note 4 round double side tape might be enough to hang the poster.
Check the number we assigned to your poster. More Info
Check the number assigned to your poster at the entrance of the exhibition and posters hall.
** We would like to inform that abstracts won't be listed in the RPGR2017 booklet if the registration fee is not paid until Monday, September 11, 2017.**

Tuesday & Wednesday (50) - Alphabetical order

Author & Title Abstract
32 Faisal Ahmed (Sungkyunkwan University, South Korea)
Study of High Electric Field Breakdown Thermometry in Black Phosphorus Field Effect Transistor
5 Andrew Aikawa (UC Berkeley, USA)
Atomically Precise Graphene Nanoribbon Heterojunctions from a Single Molecular Precursor
6 Jinwook Baek (KAIST, South Korea)
Direct Growth of Polymer-Derived Graphene via Mobile Hot-Wire-Assisted CVD
16 Giulio Baldi (National University of Singapore, Singapore)
Unveiling the role of excitons with ab initio principles calculation for Mono- and Multi-Layered Black Phosphorus
7 Kevin Bogaert (Massachusetts Institute of Technology, USA)
Transition Metal Dichalcogenides with Spatially Controlled Composition
17 Andrey Bylinkin (Moscow Institute of Physics and Technology (State University), Russia)
Inelastic electron tunneling accompanied by plasmon emission in graphene-based heterostructures
33 Gaganpreet Chadha (Indian Institute of Science Education and Research, India)
Doped phosphorene nanosheet based gas sensor: an application to NH3
8 Hao-Ting Chen (Chung Cheng, Taiwan)
Graphene defect formation during CVD growth
9 Wei-Hung Chen (National Chung Cheng Unerversity, Taiwan)
Ultrafast synthesis of high quality graphene by slow gas flow
18 Krishna Prasad Dhakal (Yonsei University, South Korea)
Local Strain Induced Bandgap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides
1 Nileshkumar Dubey (National University of Singapore, Singapore)
Effect of graphene coated titanium via wet and dry transfer technique on collagen synthesis by pre-osteoblast
34 Ayato Horie (University of Tsukuba, Japan)
Electrical Conduction of Folded Graphene in Magnetic Fields
35 Naoki Hoshi (University of Tsukuba, Japan)
Detecting Vortices in Thin Layered Superconductor NbSe2 Using Small Tunnel Junctions
36 Yu-Ting Huang (Academia Sinica, Taiwan)
Enhanced Transport Characteristics of Few-layer Indium Selenide Transistors with Extended Stability Using an Indium Oxide Encapsulated Layer
10 Loïc Huder (INAC/CEA Grenoble, France)
Single-step growth of graphene and electrical contacts on SiC
37 Changsik Kim (Sungkyunkwan University, South Korea)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
38 Hyun-Jung Kim (Korea Institute for Advanced Study, South Korea)
Contrasting structural and electrical phase transition behaviors of layered transition metal dichalcogenides MoTe2 and WTe2
19 Kangwon Kim (Sogang University, South Korea)
Excitonic resonance effects and Davydov splitting in circularly polarized Raman spectra of few-layer WSe2
2 Jean Pierre Leburton (University of Illinois, USA)
Graphene and 2D materials for Epigenetic Applications
20 Seonwoo Lee (Yonsei University, South Korea)
Thickness dependent phonon renormalization in ultrathin silicon nanomembranes
11 Songjae Lee (Sungkyunkwan University, South Korea)
Patterned growth of graphene by using seed
39 Che-Yi Lin (National Chiao Tung University, Taiwan)
Explore intrinsically electrical characteristics of atomically thin SnS2 flake
21 Woongki Na (Sogang University, South Korea)
Interlayer interaction of MoS2 depending on stacking order
22 Kazushi Nakamura (University of Tsukuba, Japan)
Simplified Estimation of Crystallographic Orientation of Strained Graphene by Micro-Raman Spectroscopy
3 Donggyu Nam (Ulsan National Institute of Science and Technology, South Korea)
Establishment of pathogen-free human pluripotent stem cell culture method using graphene that meets clinical-grade
40 Shuichi Ogawa (Tohoku University, Japan)
Valence band evaluation of graphene using in-situ photoelectron spectroscopy with non-monochromatic He I line
23 Zi En Ooi (Institute of Materials Research and Engineering, IMRE, Singapore)
Circular Dichroic Photoluminescence from Multilayer WS2
24 Jingyang Peng (RMIT, Australia)
Tunable mid-infrared plasmons supported by graphene nanomesh structures
41 Kazi Rafsanjani Amin (Indian Institute of Science, India)
Multifractal Conductance Fluctuations in Single-layer Graphene Field Effect Transistor Devices
25 Emilia Ridolfi (Centre for Advanced 2D Materials, NUS, Singapore)
Modeling excitonic effects in the linear and non-linear optical response of transition-metal dichalcogenides
4 Vinicius Rosa (National University of Singapore, Singapore)
Osteoblastic maturation on graphene film onto titanium via dry transfer technique
42 Suman Sarkar (Indian Institute of Science, India)
Role of different scattering mechanisms on the temperature dependence of transport in graphene
43 Saeid Shojaei (University of Tabriz, RIAPA, Iran)
Negative differential resistance in fluorographene matrix
26 Mandeep Singh (RMIT University, Australia)
Soft exfoliation of 2D SnO with size-dependent optical properties
12 Jan Sobieski (Institiute of Electronic Materials Technology, Poland)
Impact of MOCVD growth parameters on nucleation density in MoS2 epitaxial layers.
44 Hiroki Sonoda (University of Tsukuba, Japan)
Atmosphere Dependence of Normal State Resistance of BSCCO Thin Films Obtained with Micromechanical Exfoliation
13 Ali Syariati (University of Groningen, Netherlands)
Controlling Source Concentration to Obtain A High Quality Film of Single Layer MoS2 growth by Chemical Vapor Deposition
45 Miuko Tanaka (University of Tokyo, Japan)
Non-local transport in symmetry broken state of bilayer graphene under magnetic field
14 David Teich (TU Dresden, Germany)
Simulation of Chemical Vapor Deposition for Graphene using Phase Field Crystal Models
46 Yudi Tu (Kyoto University, Japan)
Fabrication of Reduced Graphene Oxide Micro Patterns by Vacuum-ultraviolet Irradiation: from Chemical and Structural Evolution to Improving Patterning Precision by Light Collimation
15 Keiji Ueno (Saitama University, Japan)
Low Temperature Growth of Tungsten Disulfide Thin Films by Atomic Layer Deposition Using Liquid Precursors
27 Linlin Wang (University of Ulsan, South Korea)
A New Turn-on Fluorescent Sensor for the Detection of Biological Thiols based on the Benzoxazole Dye
28 Ho Yi Wei (National University of Singapore, Singapore)
Single-beam second-harmonic spectroscopy of valley polarization in molibdenium diselenide
47 Daisuke Yabe (University of Tsukuba, Japan)
Superconducting Transition of Thin Layered Superconductor NbSe2: Influence of Device Structures
29 Takatoshi Yamada (National Institute of Advanced Industrial Science and Technology, Japan)
Low optical reflectance of vertically aligned graphene sheets
48 Shih-Hsien Yang (National Tsing Hua University, Taiwan)
Tunnel Field-Effect Transistors in van der Waals BP/MoS2 Device.
49 Can Yesilyurt (National University of Singapore, Singapore)
Anomalous optoelectronic transport induced by titled energy dispersion in Weyl semimetals
50 Lei Zhang (Centre for Advanced 2D Materials, Singapore)
Surface-Adsorption of Metal-Phthalocyanine Molecules on Transition-Metal Dichalcogenides
30 Wang Zhe (NUS Centre for Advanced 2D Materials and Graphene Research Centre, Singapore)
Optical Switching via Self-Diffraction in ITO
31 Hu Zhenliang (National University of Singapore, Singapore)
Origin of trion fluorescence in WS2 monolayer edges
50 / 50

Thursday& Friday (46) - Alphabetical order

Author & Title Abstract
56 Atsushi Ando (National Institute of Advanced Industrial Science and Technology, Japan)
Morphology and electrical studies on MoS2 field-effect transistor irradiated with N2 plasma
94 Chang-Hsiao Chen (Feng Chia University, Taiwan)
Heat Dissipation from Copper Vapor Chamber by CVD Graphene
79 Chuan Chen (Centre for Advanced 2D Materials, Singapore)
Doping dependence of an excitonic-driven CDW phase in 1TTiSe2
51 Ding-Rui Chen (National Chung Cheng Unerversity, Taiwan)
Dielectrophoretic Decoration of Graphene Grain Boundaries
57 Hao Chen (C2DAM,NUS, Singapore)
Gate controlled conducting channels in bilayer graphene
70 Yi Chen (UC Berkeley, USA)
Local probe studies of charge density wave in monolayer TaSe2
52 Zhongxin Chen (NUS, Singapore)
Interface confined hydrogen evolution reaction in zero valent metal nanoparticles-intercalated molybdenum disulfide
80 Sho Furutani (University of Tsukuba, Japan)
Electronic properties of two-dimensional molecular sheets of chemically decorated fullerenes under an external electric field
81 Yanlin Gao (University of Tsukuba, Japan)
Electrostatic properties of edge-functionalized graphene nanoribbon under the lateral electric field
65 Bolormaa Gendensuren (University of Ulsan, South Korea)
Crosslinked Poly(acrylamide-co-acrylonitrile) as an efficient binder for Silicon/Graphite anodes of Lithium ion batteries
71 Loïc Huder (INAC/CEA Grenoble, France)
Spectroscopic signature of uniaxial relative strain in twisted graphene layers
74 Yiqun Jiang (National University of Singapore, Singapore)
Nitrogen-doped graphene hydrogels as potential adsorbents and photocatalysts for environmental remediation
68 Minwoong Joe (Sungkyunkwan University, South Korea)
Piezomagnetic response in CrPS4 monolayer
82 Jong Hyun Jung (Seoul National University, South Korea)
Period-Doubling Bifurcations of Graphene Wrinkles on a Soft Substrate: A Numerical Study
95 Seoung-Hun Kang (Korea Institute for Advanced Study, South Korea)
Thermal Transport Properties of Single-Layer Gray-Arsenic
83 Hiroyo Kawai (Institute of Materials Research and Engineering, IMRE, Singapore)
Interlayer coupling in WS2-MoS2 heterostructure with different stacking angles: A first- principles study
58 Muhammad Atif Khan (Sungkyunkwan University, South Korea)
Self-Biased Diode Based on MoS2
75 Kwang-Seop Kim (Korea Institute of Machinery & Materials (KIMM), South Korea)
Effect of Adhesive Layer Thickness on Graphene Transfer
69 Raj Kumar (Indian Institute of Technology Roorkee, India)
Temperature-time dependent delamination energy of thermally reduced graphene oxide on soda lime glass as transparent conducting electrode
66 Seul Lee (University of Ulsan, South Korea)
The effect of Polytetrafluorethylene (PTFE) as binder of Carbon Electrochemical Double-Layer Capacitors (EDLCs)
84 Suyeong Lee (DGIST, South Korea)
Electronic and Transport Properties of Vertical Heterostrucrure of h-BN and Black Phosphorus
59 Yongjun Lee (Yonsei University, South Korea)
Graphene-based Triboelectric Nanogenerator for Self-powered Stretchable Wearable Touch Sensor
85 JinShu Li (SKKU Advanced Institute of Nano-Technology (SAINT), South Korea)
Quasiparticle interference (QPI) in twisted bilayer graphene
86 Yang Li (Tohoku University, Japan)
Electronic and Transport Properties of Carbon Nanotube Bundles
87 Yuanyuan Li (University of Ulsan, South Korea)
Hydrogen Release from KMgH3 Hydride with Alkali Metal Dopants?A First-Principles Study
60 Shi-Jun Liang (Singapore University of Technology and Design, Singapore)
Theoretical Performance limit of Telecom-wavelength Graphene-Silicon Schottky Photodetector
88 Julia Link (Karlsruhe Institute of Technology, Germany)
Hydrodynamics in isotropic and anisotropic Dirac-systems
61 Ying Liu (Aalto University, Finland)
Pick-up Technique based on 2D Materials Stamp for High Quality Heterostructure Devices
89 Mina Maruyama (University of Tsukuba, Japan)
Magnetism and Electronic Polarity of Two-Dimensional Network Consisting of C40 Fullerene
90 Manaho Matsubara (University of Tsukuba, Japan)
Fermi level tuning of N-doped graphene by an external electric field
76 Paritat Muanchan (Yamagata University, Japan)
Vertically Aligned Composite Nanostructures Obtained by Nanoimprint Process
96 Nagarjuna Neella (Indian Institute of Science, India)
RGO decorated ZnO nanosheets for Temperature Sensor Applications
53 Linh Ngo (University of Ulsan, South Korea)
NiMn2O4 spinel binary nanostructure decorated on three-dimensional graphene oxide hydrogel for non-enzymatic glucose sensor and energy storage application
97 Thanh-Truc Pham (University of Ulsan, South Korea)
A study of temperature and nickel titanium trioxide effect on the thermal generation of carbon nitride
67 Yanchunxiao Qi (University of Ulsan, South Korea)
The poly(styrene-pyrrole- acrylonitrile/butylacrylate)core-shell binder and its performance in anodes of Lithium-ion batteries
62 Deshun Qu (SKKU Advanced Institute of Nano-Technology (SAINT), South Korea)
Carrier type modulation and mobility improvement of thin MoTe2
54 Sunmin Ryu (POSTECH, South Korea)
Doubly Anisotropic Thermal Oxidation of 2-Dimensional MoS2 Supported on Silica Substrates
91 Hisaki Sawahata (University of Tsukuba, Japan)
Energetics and electronic properties of B3N3-doped graphene: Semiconducting graphene heterostructures
77 Marcos Vinicius Surmani Martins (National University of Singapore, Singapore)
Graphene-based membranes for ionic sieving
72 Hsin-Zon Tsai (UC Berkeley, USA)
Gate-tunable one-dimensional charge pattern on a graphene device
78 Oral Ualibek (National Laboratory Astana, Nazarbayev University, Kazakhstan)
A facile method to fabricate graphene-based superhydrophobic magnetic material for oil-water separation
63 Junyong Wang (National University of Singapore, Singapore)
Efficient carrier-to-exciton conversion in field emission tunnel diodes based on MIS-type van der Waals heterostack
73 Xinyun Wang (NUS, Singapore)
TMDs imaging and characterizations using Kelvin probe force microscopy
92 Airi Yasuma (University of Tsukuba, Japan)
Stability of edge oxidized graphene nanoribbons
64 Dewu Yue (SKKU Advance Institue of Nano Technology, South Korea)
Formation of polymeric Ohmic contact with benzyl viologen for two-dimensional semiconductor devices
93 Won Seok Yun (DGIST, South Korea)
Novel two-dimensional semiconductors ZrNCl and HfNCl: Stability, electric transport, and thermoelectric properties
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